New Product
Si7454CDP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
20
15
10
5
0
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Current Derating*
40
32
24
16
8
0
2.20
1.76
1.32
0.88
0.44
0.00
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperature (°C)
Power, Junction-to-Case
T A - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65940
S10-0784-Rev. A, 05-Apr-10
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SI7455DP-T1-GE3 MOSFET P-CH D-S 80V PPAK 8SOIC
SI7456DP-T1-GE3 MOSFET N-CH 100V 5.7A PPAK 8SOIC
SI7457DP-T1-GE3 MOSFET P-CH D-S 100V PPAK 8SOIC
SI7460DP-T1-GE3 MOSFET N-CH 60V 11A PPAK 8SOIC
SI7461DP-T1-GE3 MOSFET P-CH 60V 8.6A PPAK 8SOIC
SI7462DP-T1-GE3 MOSFET N-CH D-S 200V 8-SOIC
SI7465DP-T1-GE3 MOSFET P-CH 60V 3.2A PPAK 8SOIC
SI7530DP-T1-GE3 MOSFET N/P-CH 60V PWRPAK 8-SOIC
相关代理商/技术参数
SI7454DDP-T1-GE3 功能描述:MOSFET 100volt 33mOhms@10V 21A N-Ch T-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7454DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET
SI7454DP_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET
SI7454DP-T1 功能描述:MOSFET 100V 7.8A 4.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7454DP-T1-E3 功能描述:MOSFET 100V 7.8A 4.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7454DP-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI7454DP-T1-GE3 功能描述:MOSFET 100V 7.8A 4.8W 34mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7455DP-T1-E3 功能描述:MOSFET 80V 28A 83.3W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube